Parametric results for: FSPYE234F4 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 3

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

250 V 3

3 hits Apply

Drain Current-Max (ID) (1)

9 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

215 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-CBCC-N3 3

3 hits Apply

e0 3

3 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 1 International Rectifier 1 Intersil Corporation 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

CHIP CARRIER 3

3 hits Apply

Obsolete 1 Transferred 2

3 hits Apply

No 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

30 W 1 42 W 1

Min (W) - Max (W)

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply