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FSL23A4D3
Intersil Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 5 A | 480 mΩ | RADIATION HARDENED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 15 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | e0 | Not Qualified | 150 °C | METAL | ROUND | CYLINDRICAL | TIN LEAD | WIRE | BOTTOM | INTERSIL CORP | BCY | 4 | not_compliant | EAR99 | ||||||||
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FSL23A4D1
Intersil Corporation
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Check for Price | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 5 A | 480 mΩ | RADIATION HARDENED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 25 W | 15 A | SWITCHING | SILICON | 75 ns | 45 ns | TO-205AF | O-MBCY-W3 | e0 | Not Qualified | 150 °C | METAL | ROUND | CYLINDRICAL | Tin/Lead (Sn/Pb) | WIRE | BOTTOM | INTERSIL CORP | BCY | 4 | not_compliant | EAR99 | 8541.29.00.95 | ||||
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FSL23A4D1
International Rectifier
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Check for Price | No | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 5 A | 480 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 15 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | e0 | Not Qualified | 150 °C | METAL | ROUND | CYLINDRICAL | TIN LEAD | WIRE | BOTTOM | INTERNATIONAL RECTIFIER CORP | BCY | 4 | compliant | EAR99 | CYLINDRICAL, O-MBCY-W3 | ||||||||
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FSL23A4D3
Harris Semiconductor
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Check for Price | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 5 A | 480 mΩ | RADIATION HARDENED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 25 W | 15 A | SWITCHING | SILICON | 75 ns | 45 ns | TO-205AF | O-MBCY-W3 | e0 | Not Qualified | 150 °C | METAL | ROUND | CYLINDRICAL | Tin/Lead (Sn/Pb) | WIRE | BOTTOM | HARRIS SEMICONDUCTOR | unknown | EAR99 | 8541.29.00.95 | CYLINDRICAL, O-MBCY-W3 | |||||
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FSL23A4D1
Fairchild Semiconductor Corporation
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Check for Price | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 5 A | 480 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 10 W | 15 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | e0 | Not Qualified | 150 °C | METAL | ROUND | CYLINDRICAL | Tin/Lead (Sn/Pb) | WIRE | BOTTOM | FAIRCHILD SEMICONDUCTOR CORP | BCY | 4 | compliant | EAR99 | HERMETIC SEALED, METAL CAN-3 | ||||||||
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FSL23A4D3
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 5 A | 480 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 10 W | 15 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | e0 | Not Qualified | 150 °C | METAL | ROUND | CYLINDRICAL | TIN LEAD | WIRE | BOTTOM | FAIRCHILD SEMICONDUCTOR CORP | BCY | 4 | compliant | EAR99 | HERMETIC SEALED, METAL CAN-3 | ||||||||
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FSL23A4D1
Harris Semiconductor
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Check for Price | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 5 A | 480 mΩ | RADIATION HARDENED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 25 W | 15 A | SWITCHING | SILICON | 75 ns | 45 ns | TO-205AF | O-MBCY-W3 | e0 | Not Qualified | 150 °C | METAL | ROUND | CYLINDRICAL | Tin/Lead (Sn/Pb) | WIRE | BOTTOM | HARRIS SEMICONDUCTOR | unknown | EAR99 | 8541.29.00.95 | CYLINDRICAL, O-MBCY-W3 |