Parametric results for: FS50VS-2 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 5

5 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

100 V 5

5 hits Apply

Drain Current-Max (ID) (1)

50 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

55 mΩ 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PSSO-G2 5

5 hits Apply

e0 1

5 hits Apply

Manufacturer (3)

Mitsubishi Electric 3 Powerex Power Semiconductors 1 Renesas Electronics Corporation 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

2 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 3

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

SMALL OUTLINE 5

5 hits Apply

Active 1 Obsolete 3 Transferred 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

70 W 1

5 hits Apply

70 W 3

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply