Parametric results for: FRS130 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

RADIATION HARDENED 30

36 hits Apply

ISOLATED 33

36 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 33

36 hits Apply

DS Breakdown Voltage-Min (1)

100 V 33

36 hits Apply

Drain Current-Max (ID) (1)

12 A 33

36 hits Apply

Drain-source On Resistance-Max (1)

195 mΩ 36

36 hits Apply

METAL-OXIDE SEMICONDUCTOR 36

36 hits Apply

TO-257AA 36

36 hits Apply

R-MSFM-P3 27 S-MSFM-P3 9

36 hits Apply

e0 22

36 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 6 Harris Semiconductor 15 Intersil Corporation 15

36 hits Apply

Number of Elements (1)

1 33

36 hits Apply

Number of Terminals (1)

3 36

36 hits Apply

ENHANCEMENT MODE 36

36 hits Apply

150.0 °C 24

36 hits Apply

METAL 36

36 hits Apply

RECTANGULAR 27 SQUARE 9

36 hits Apply

FLANGE MOUNT 36

36 hits Apply

Obsolete 24 Transferred 12

36 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 36

36 hits Apply

50 W 24

36 hits Apply

50 W 22

36 hits Apply

Surface Mount (1)

NO 36

36 hits Apply