Parametric results for: FRM430R under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

RADIATION HARDENED 5

11 hits Apply

Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 6

11 hits Apply

DS Breakdown Voltage-Min (1)

500 V 6

11 hits Apply

Drain Current-Max (ID) (1)

3 A 10

11 hits Apply

Drain-source On Resistance-Max (1)

2.5 Ω 7

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

TO-204AA 7

11 hits Apply

O-MBFM-P2 7

11 hits Apply

e0 9

11 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 1 Harris Semiconductor 5 Intersil Corporation 5

11 hits Apply

Number of Elements (1)

1 10

11 hits Apply

Number of Terminals (1)

2 7

11 hits Apply

ENHANCEMENT MODE 11

11 hits Apply

150.0 °C 9

11 hits Apply

METAL 7

11 hits Apply

ROUND 7

11 hits Apply

FLANGE MOUNT 7

11 hits Apply

Obsolete 9 Transferred 2

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

11 hits Apply

75 W 4

11 hits Apply

30 W 1 75 W 8

Min (W) - Max (W)

11 hits Apply

Surface Mount (1)

NO 11

11 hits Apply