Parametric results for: FRF9250R under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

RADIATION HARDENED 7

9 hits Apply

ISOLATED 8

9 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 8

9 hits Apply

DS Breakdown Voltage-Min (1)

200 V 8

9 hits Apply

Drain Current-Max (ID) (1)

14 A 8

9 hits Apply

Drain-source On Resistance-Max (1)

315 mΩ 9

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

9 hits Apply

TO-254AA 9

9 hits Apply

R-MSFM-P3 1 S-MSFM-P3 8

9 hits Apply

e0 6

9 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 2 Harris Semiconductor 5 Intersil Corporation 2

9 hits Apply

Number of Elements (1)

1 8

9 hits Apply

Number of Terminals (1)

3 9

9 hits Apply

ENHANCEMENT MODE 9

9 hits Apply

150.0 °C 6

9 hits Apply

METAL 9

9 hits Apply

RECTANGULAR 1 SQUARE 8

9 hits Apply

FLANGE MOUNT 9

9 hits Apply

Obsolete 5 Transferred 4

9 hits Apply

Polarity/Channel Type (2)

N-CHANNEL 1 P-CHANNEL 8

9 hits Apply

125 W 4

9 hits Apply

50 W 1 125 W 5

Min (W) - Max (W)

9 hits Apply

Surface Mount (1)

NO 9

9 hits Apply