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FQI13N06LTU
Fairchild Semiconductor Corporation
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 13.6 A | 140 mΩ | 90 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 45 W | 54.4 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e3 | Not Qualified | 175 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | TO-262AA | I2PAK-3 | 3 | not_compliant | EAR99 | ||||||
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FQI13N06LTU
Rochester Electronics LLC
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Check for Price | Yes | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 13.6 A | 140 mΩ | 90 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 54.4 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | COMMERCIAL | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | NOT SPECIFIED | THROUGH-HOLE | SINGLE | ROCHESTER ELECTRONICS LLC | TO-262AA | I2PAK-3 | 3 | unknown | ||||||
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FQI13N06TU
Fairchild Semiconductor Corporation
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 13 A | 135 mΩ | 85 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 45 W | 52 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e3 | Not Qualified | 175 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | TO-262AA | I2PAK-3 | 3 | not_compliant | EAR99 | ||||||
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FQI13N06
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 13 A | 135 mΩ | 85 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 45 W | 52 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e0 | Not Qualified | 175 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | TO-262 | IN-LINE, R-PSIP-T3 | 3 | unknown | EAR99 | ||||||
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FQI13N06L
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 13.6 A | 140 mΩ | 90 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 45 W | 54.4 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e0 | Not Qualified | 175 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | TO-262 | IN-LINE, R-PSIP-T3 | 3 | unknown | EAR99 | ||||||
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FQI13N06TU
Rochester Electronics LLC
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Check for Price | Yes | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 13 A | 135 mΩ | 85 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 52 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e3 | COMMERCIAL | NOT APPLICABLE | NOT APPLICABLE | NOT APPLICABLE | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN | THROUGH-HOLE | SINGLE | ROCHESTER ELECTRONICS LLC | TO-262AA | I2PAK-3 | 3 | unknown |