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Parametric » Transistors » Power Field-Effect Transistors

Parametric results for: FQB50N06TM under Power Field-Effect Transistors

Select parts from the table below to compare.

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Select Parts		Part Number

		FQB50N06TM onsemi
		FQB50N06TM Fairchild Semiconductor Corporation
		FQB50N06TM Rochester Electronics LLC

				Most Relevant								Technical							Compliance				Operating Conditions				Physical							Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	DS Breakdown Voltage-Min	Number of Elements	Drain Current-Max (ID)	Drain-source On Resistance-Max	Avalanche Energy Rating (Eas)	FET Technology	Operating Mode	Power Dissipation-Max (Abs)	Pulsed Drain Current-Max (IDM)	Transistor Application	Transistor Element Material	JEDEC-95 Code	JESD-30 Code	JESD-609 Code	Qualification Status	Moisture Sensitivity Level	Operating Temperature-Max	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Case Connection	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Package Description	Manufacturer Package Code	Reach Compliance Code	ECCN Code	Samacsys Manufacturer	Part Package Code	Pin Count	HTS Code

Yes

End Of Life

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

60 V

1

50 A

22 mΩ

490 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

120 W

200 A

SWITCHING

SILICON

TO-263AB

R-PSSO-G2

e3

Not Qualified

1

175 °C

245

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

SINGLE

ONSEMI

D2PAK-3

418AJ

not_compliant

EAR99

onsemi

Check for Price

Yes

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

60 V

1

50 A

22 mΩ

490 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

120 W

200 A

SWITCHING

SILICON

TO-263AB

R-PSSO-G2

e3

Not Qualified

1

175 °C

245

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

D2PAK-3

2LD,TO263, SURFACE MOUNT

not_compliant

EAR99

D2PAK

2

8541.29.00.95

Check for Price

Yes

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

60 V

1

50 A

22 mΩ

490 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

200 A

SWITCHING

SILICON

TO-263AB

R-PSSO-G2

e3

COMMERCIAL

1

245

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

SINGLE

ROCHESTER ELECTRONICS LLC

D2PAK-3

unknown

D2PAK

3

Compare

onsemi

Yes

End Of Life

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

60 V

1

50 A

22 mΩ

490 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

120 W

200 A

SWITCHING

SILICON

TO-263AB

R-PSSO-G2

e3

Not Qualified

1

175 °C

245

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

SINGLE

ONSEMI

D2PAK-3

418AJ

not_compliant

EAR99

onsemi

Fairchild Semiconductor Corporation

Check for Price

Yes

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

60 V

1

50 A

22 mΩ

490 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

120 W

200 A

SWITCHING

SILICON

TO-263AB

R-PSSO-G2

e3

Not Qualified

1

175 °C

245

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

D2PAK-3

2LD,TO263, SURFACE MOUNT

not_compliant

EAR99

D2PAK

2

8541.29.00.95

Rochester Electronics LLC

Check for Price

Yes

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

60 V

1

50 A

22 mΩ

490 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

200 A

SWITCHING

SILICON

TO-263AB

R-PSSO-G2

e3

COMMERCIAL

1

245

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

SINGLE

ROCHESTER ELECTRONICS LLC

D2PAK-3

unknown

D2PAK

3