Parametric results for: FPD750SOT343E under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

SOURCE 2

9 hits Apply

Configuration (1)

SINGLE 8

9 hits Apply

DS Breakdown Voltage-Min (1)

6 V 8

9 hits Apply

HIGH ELECTRON MOBILITY 8

9 hits Apply

Highest Frequency Band (1)

S BAND 8

9 hits Apply

R-PDSO-G4 8

9 hits Apply

Manufacturer (3)

Filtronic Compound Semiconductor 1 Qorvo 4 RF Micro Devices Inc 4

9 hits Apply

Number of Elements (1)

1 8

9 hits Apply

Number of Terminals (1)

4 8

9 hits Apply

DEPLETION MODE 8

9 hits Apply

175.0 °C 4

9 hits Apply

PLASTIC/EPOXY 8

9 hits Apply

RECTANGULAR 8

9 hits Apply

SMALL OUTLINE 8

9 hits Apply

Obsolete 4 Transferred 5

9 hits Apply

260 1

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

9 hits Apply

1.1 W 4

9 hits Apply

Surface Mount (1)

YES 8

9 hits Apply