Parametric results for: FPD1050 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

SOURCE 4

27 hits Apply

Configuration (1)

SINGLE 6

27 hits Apply

DS Breakdown Voltage-Min (2)

8 V 4 10 V 2

Min (V) - Max (V)

27 hits Apply

HIGH ELECTRON MOBILITY 6

27 hits Apply

Highest Frequency Band (1)

X BAND 2

27 hits Apply

R-PSSO-F3 4 R-XUUC-N 2

27 hits Apply

Manufacturer (3)

Filtronic Compound Semiconductor 4 Qorvo 10 RF Micro Devices Inc 13

27 hits Apply

1 2 2 1

27 hits Apply

Number of Elements (1)

1 6

27 hits Apply

Number of Terminals (1)

3 4

27 hits Apply

DEPLETION MODE 6

27 hits Apply

175.0 °C 23

27 hits Apply

PLASTIC/EPOXY 4 UNSPECIFIED 2

27 hits Apply

RECTANGULAR 6

27 hits Apply

SMALL OUTLINE 4 UNCASED CHIP 2

27 hits Apply

Active 1 Obsolete 13 Transferred 13

27 hits Apply

No 1 Yes 4

27 hits Apply

NOT SPECIFIED 4

27 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 23

27 hits Apply

2 W 18 3.4 W 5

Min (W) - Max (W)

27 hits Apply

Surface Mount (1)

YES 6

27 hits Apply