Parametric results for: FLU10 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

HIGH RELIABILITY 9

13 hits Apply

SOURCE 5

13 hits Apply

Configuration (1)

SINGLE 9

13 hits Apply

DS Breakdown Voltage-Min (1)

15 V 8

13 hits Apply

JUNCTION 8 METAL-OXIDE SEMICONDUCTOR 1

13 hits Apply

Highest Frequency Band (1)

L BAND 9

13 hits Apply

R-CQMW-F4 3 R-CQSO-F4 2 R-PQFP-F4 4

13 hits Apply

Manufacturer (4)

FUJITSU Limited 2 FUJITSU Semiconductor Limited 2 SUMITOMO ELECTRIC Device Innovations Inc 5 SUMITOMO ELECTRIC Industries Ltd 4

13 hits Apply

Number of Elements (1)

1 9

13 hits Apply

Number of Terminals (1)

4 9

13 hits Apply

DEPLETION MODE 9

13 hits Apply

175.0 °C 1

13 hits Apply

CERAMIC, METAL-SEALED COFIRED 5 PLASTIC/EPOXY 4

13 hits Apply

RECTANGULAR 9

13 hits Apply

FLATPACK 4 MICROWAVE 3 SMALL OUTLINE 2

13 hits Apply

Active 1 Contact Manufacturer 3 Obsolete 6 Transferred 3

13 hits Apply

No 2 Yes 2

13 hits Apply

NOT SPECIFIED 4

13 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

13 hits Apply

4.16 W 1

13 hits Apply

Surface Mount (1)

YES 9

13 hits Apply