Parametric results for: FLM0910-4C under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

HIGH RELIABILITY 2

2 hits Apply

SOURCE 2

2 hits Apply

Configuration (1)

SINGLE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

15 V 2

2 hits Apply

Drain Current-Max (ID) (1)

1.3 A 2

2 hits Apply

JUNCTION 2

2 hits Apply

Highest Frequency Band (1)

X BAND 2

2 hits Apply

R-CDFM-F2 2

2 hits Apply

Manufacturer (2)

FUJITSU Limited 1 FUJITSU Semiconductor Limited 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

2 2

2 hits Apply

DEPLETION MODE 2

2 hits Apply

175.0 °C 2

2 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Obsolete 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

25 W 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply