Parametric results for: FF11MR12W1M1B11BOMA1 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

ISOLATED 1

1 hit Apply

Configuration (1)

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR 1

1 hit Apply

DS Breakdown Voltage-Min (1)

1.2 kV 1

1 hit Apply

Drain Current-Max (ID) (1)

100 A 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

R-XUFM-X18 1

1 hit Apply

Manufacturer (1)

Infineon Technologies AG 1

1 hit Apply

Number of Elements (1)

2 1

1 hit Apply

Number of Terminals (1)

18 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

-40.0 °C 1

1 hit Apply

UNSPECIFIED 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Obsolete 1

1 hit Apply

NOT SPECIFIED 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply