Parametric results for: FDS3580 under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

80 V 6

6 hits Apply

Drain Current-Max (ID) (1)

7.6 A 6

6 hits Apply

Drain-source On Resistance-Max (2)

27 mΩ 3 29 mΩ 3

Min (Ω) - Max (Ω)

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-PDSO-G8 6

6 hits Apply

e3 3

6 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 4 onsemi 1 Rochester Electronics LLC 1

6 hits Apply

1 3

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

8 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 5

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

SMALL OUTLINE 6

6 hits Apply

Active 2 Obsolete 3 Transferred 1

6 hits Apply

Yes 3

6 hits Apply

260 3

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

2.5 W 2

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply