Parametric results for: FDN306P under Small Signal Field-Effect Transistors

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Manufacturer Part Number: fdn306p
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FDN306P
onsemi
$0.2612 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 12 V 1 2.6 A 40 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 500 mW 500 mW SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL ONSEMI SUPERSOT-3 527AG compliant EAR99 8541.21.00.95 onsemi
FDN306P-G
Fairchild Semiconductor Corporation
Check for Price Obsolete P-CHANNEL YES SINGLE 1 2.6 A METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 500 mW 150 °C FAIRCHILD SEMICONDUCTOR CORP unknown EAR99
FDN306P-F095
Fairchild Semiconductor Corporation
Check for Price Yes Obsolete P-CHANNEL YES SINGLE 1 2.6 A METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 500 mW e3 1 150 °C 260 30 Tin (Sn) FAIRCHILD SEMICONDUCTOR CORP compliant EAR99
FDN306P_NL
Fairchild Semiconductor Corporation
Check for Price Yes Obsolete P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 12 V 1 2.6 A 40 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 500 mW SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL FAIRCHILD SEMICONDUCTOR CORP SMALL OUTLINE, R-PDSO-G3 SUPERSOT compliant EAR99 SOT 3
FDN306PD87Z
Fairchild Semiconductor Corporation
Check for Price Obsolete P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 12 V 1 2.6 A 40 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-G3 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL FAIRCHILD SEMICONDUCTOR CORP SMALL OUTLINE, R-PDSO-G3 SUPERSOT unknown EAR99 SOT 3
FDN306P
Rochester Electronics LLC
Check for Price Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 12 V 1 2.6 A 40 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-G3 e3 COMMERCIAL 1 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL ROCHESTER ELECTRONICS LLC SUPERSOT-3 SUPERSOT unknown SOT 3
FDN306P
Fairchild Semiconductor Corporation
Check for Price Yes Yes Transferred P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 12 V 1 2.6 A 40 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 500 mW SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL FAIRCHILD SEMICONDUCTOR CORP SUPERSOT-3 MOLDED PACKAGE, SUPERSOT, 3 LEAD compliant EAR99 8541.21.00.95 SSOT 3