Parametric results for: FDD6530A under Power Field-Effect Transistors

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Manufacturer Part Number: fdd6530a
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FDD6530A
onsemi
$0.6890 Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 20 V 1 21 A 32 mΩ 55 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.6 W 100 A SWITCHING SILICON TO-252 R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE ONSEMI DPAK-3 369AS not_compliant EAR99 onsemi
FDD6530A
Rochester Electronics LLC
Check for Price Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 20 V 1 21 A 32 mΩ 55 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 100 A SWITCHING SILICON TO-252 R-PSSO-G2 e3 COMMERCIAL 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE ROCHESTER ELECTRONICS LLC DPAK-3 unknown TO-252 3
FDD6530A_NL
Fairchild Semiconductor Corporation
Check for Price Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 20 V 1 21 A 32 mΩ 55 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.6 W 100 A SWITCHING SILICON TO-252 R-PSSO-G2 e3 Not Qualified 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE FAIRCHILD SEMICONDUCTOR CORP DPAK-3 not_compliant EAR99 TO-252 3
FDD6530A
Fairchild Semiconductor Corporation
Check for Price Yes Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 20 V 1 21 A 32 mΩ 55 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.6 W 100 A SWITCHING SILICON TO-252 R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE FAIRCHILD SEMICONDUCTOR CORP DPAK-3 TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB not_compliant EAR99 DPAK 3 8541.29.00.95