Parametric results for: FDC6301N under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 4

8 hits Apply

Configuration (2)

SEPARATE, 2 ELEMENTS 3 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 5

8 hits Apply

DS Breakdown Voltage-Min (1)

25 V 8

8 hits Apply

Drain Current-Max (ID) (2)

200 mA 3 220 mA 5

Min (A) - Max (A)

8 hits Apply

Drain-source On Resistance-Max (2)

4 Ω 4 5 Ω 4

Min (Ω) - Max (Ω)

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

R-PDSO-G6 8

8 hits Apply

e3 4

8 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 6 onsemi 1 Rochester Electronics LLC 1

8 hits Apply

1 4

8 hits Apply

Number of Elements (1)

2 8

8 hits Apply

Number of Terminals (1)

6 8

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

150.0 °C 4

8 hits Apply

-55.0 °C 3

8 hits Apply

PLASTIC/EPOXY 8

8 hits Apply

RECTANGULAR 8

8 hits Apply

SMALL OUTLINE 8

8 hits Apply

Active 2 Obsolete 5 Transferred 1

8 hits Apply

Yes 3

8 hits Apply

260 2 NOT SPECIFIED 1

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

900 mW 3

8 hits Apply

Surface Mount (1)

YES 8

8 hits Apply