Parametric results for: FCA20N60S_F109 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

450.0 mJ 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

600 V 2

2 hits Apply

Drain Current-Max (ID) (1)

20 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

260 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

85 pF 1

2 hits Apply

R-PSFM-T3 1 R-XSFM-T3 1

2 hits Apply

e3 1

2 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 1 onsemi 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

-55.0 °C 1

2 hits Apply

PLASTIC/EPOXY 1 UNSPECIFIED 1

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Active 1 Obsolete 1

2 hits Apply

Yes 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

260 W 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply