Parametric results for: F1260 under Power Field-Effect Transistors

All Filters Configuration Drain Current-Max (ID) FET Technology Manufacturer Number of Elements Operating Mode Operating Temperature-Max Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 2

2 hits Apply

Drain Current-Max (ID) (1)

8 A 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

Manufacturer (2)

Polycore Rf Devices 1 Polyfet RF Devices 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

200.0 °C 2

2 hits Apply

Not Recommended 1 Transferred 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

150 W 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply