Parametric results for: F1207 under Power Field-Effect Transistors

All Filters Configuration Drain Current-Max (ID) FET Technology Manufacturer Number of Elements Operating Mode Operating Temperature-Max Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 3

3 hits Apply

Drain Current-Max (ID) (2)

30 mA 1 4 A 2

Min (A) - Max (A)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

Manufacturer (3)

Philips Semiconductors 1 Polycore Rf Devices 1 Polyfet RF Devices 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

DUAL GATE, ENHANCEMENT MODE 1

3 hits Apply

150.0 °C 1 200.0 °C 2

Min (°C) - Max (°C)

3 hits Apply

Not Recommended 1 Transferred 2

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

180 mW 1

3 hits Apply

Surface Mount (1)

YES 1

3 hits Apply