Parametric results for: ES29LV160E under Flash Memories

All Filters Access Time-Max Alternate Memory Width Boot Block Command User Interface Common Flash Interface Data Polling JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (2)

70 ns 16 90 ns 16

Min (ns) - Max (ns)

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8 32

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BOTTOM 16 TOP 15

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YES 31

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YES 31

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YES 31

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R-PBGA-B48 16 R-PDSO-G48 16

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e0 16

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18.4 mm 1

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Manufacturer (1)

Excel (Suzhou) Semiconductor Co Ltd 32

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Memory Density (1)

16.7772 Mbit 32

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FLASH 31

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Memory Width (1)

16 32

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3 16

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1.0 1

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1,2,1,31 31

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48 32

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1.0486 M 32

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1000000.0 32

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ASYNCHRONOUS 1

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70.0 °C 16 85.0 °C 16

Min (°C) - Max (°C)

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-40.0 °C 16 0.0 °C 16

Min (°C) - Max (°C)

32 hits Apply

Organization (1)

1MX16 32

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PLASTIC/EPOXY 32

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FBGA 16 TSOP1 1 TSSOP 15

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BGA48,6X8,32 16 TSSOP48,.8,20 15

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RECTANGULAR 32

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GRID ARRAY, FINE PITCH 16 SMALL OUTLINE, THIN PROFILE 1 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 15

32 hits Apply

Sector Size (1)

16K,8K,32K,64K 31

32 hits Apply

Supply Voltage-Nom (Vsup) (1)

3 V 1

32 hits Apply