Parametric results for: EM636327TQ-7 under DRAMs

All Filters Access Time-Max Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Terminals Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Time-Max (1)

5.5 ns 1

1 hit Apply

Clock Frequency-Max (fCLK) (1)

143 MHz 1

1 hit Apply

COMMON 1

1 hit Apply

1,2,4,8 1

1 hit Apply

R-PQFP-G100 1

1 hit Apply

Manufacturer (1)

Etron Technology Inc 1

1 hit Apply

Memory Density (1)

16.7772 Mbit 1

1 hit Apply

SYNCHRONOUS DRAM 1

1 hit Apply

Memory Width (1)

32 1

1 hit Apply

100 1

1 hit Apply

524.288 k 1

1 hit Apply

512000.0 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

512KX32 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

QFP 1

1 hit Apply

QFP100,.63X.87 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLATPACK 1

1 hit Apply

Refresh Cycles (1)

2048 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply