Parametric results for: EDE5108AESK under DRAMs

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Manufacturer Part Number: ede5108aesk
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EDE5108AESK-4E-E
Micron Technology Inc
Check for Price Obsolete MICRON TECHNOLOGY INC , compliant EAR99
EDE5108AESK-4A-E
Elpida Memory Inc
Check for Price Yes Obsolete 536.8709 Mbit 8 64MX8 1.8 V 600 ps 200 MHz 8192 FOUR BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 4,8 8 mA 1.9 V 1.7 V CMOS OTHER R-PBGA-B60 Not Qualified e1 85 °C 60 PLASTIC/EPOXY TFBGA BGA60,9X11,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.12 mm 11.5 mm 11 mm ELPIDA MEMORY INC TFBGA, BGA60,9X11,32 unknown EAR99 BGA 60 8542.32.00.28
EDE5108AESK-5C-E
Elpida Memory Inc
Check for Price Yes Obsolete 536.8709 Mbit 8 64MX8 1.8 V 500 ps 267 MHz 8192 FOUR BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 4,8 10 mA 1.9 V 1.7 V CMOS OTHER R-PBGA-B60 Not Qualified e1 85 °C 60 PLASTIC/EPOXY TFBGA BGA60,9X11,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.12 mm 11.5 mm 11 mm ELPIDA MEMORY INC TFBGA, BGA60,9X11,32 unknown EAR99 BGA 60 8542.32.00.28
EDE5108AESK-6E-E
Elpida Memory Inc
Check for Price Yes Obsolete 536.8709 Mbit 8 64MX8 1.8 V 450 ps 333 MHz 8192 FOUR BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 4,8 10 mA 1.9 V 1.7 V CMOS OTHER R-PBGA-B60 Not Qualified e1 85 °C 260 60 PLASTIC/EPOXY TFBGA BGA60,9X11,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.12 mm 11.5 mm 11 mm ELPIDA MEMORY INC TFBGA, BGA60,9X11,32 unknown EAR99 BGA 60 8542.32.00.28
EDE5108AESK-4E-E
Elpida Memory Inc
Check for Price Transferred ELPIDA MEMORY INC , unknown EAR99