Parametric results for: ECH8651R-R-TL-H under Power Field-Effect Transistors

All Filters Drain Current-Max (ID) FET Technology JESD-609 Code Manufacturer Moisture Sensitivity Level Operating Mode Operating Temperature-Max Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Drain Current-Max (ID) (1)

10 A 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

e6 1

1 hit Apply

Manufacturer (1)

onsemi 1

1 hit Apply

1 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

150.0 °C 1

1 hit Apply

Obsolete 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

1.5 W 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply