Parametric results for: DTC123J under Small Signal Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILIT-IN BIAS RESISTOR 1 BUILT IN BAIS RESISTOR RATIO IS 21 2 BUILT IN BIAS RESISTANCE RATIO IS 21 49 BUILT IN BIAS RESISTANCE RATIO IS 21.36 2 BUILT IN BIAS RESISTOR RATIO 21 1 BUILT IN BIAS RESISTOR RATIO 21.364 2 BUILT IN BIAS RESISTOR RATIO IS 21 5 BUILT IN BIAS RESISTOR RATIO IS 21.36 1 BUILT-IN BIAS RESISTANCE RATIO 21.36 1 BUILT-IN BIAS RESISTANCE RATIO IS 21 1 BUILT-IN BIAS RESISTANCE RATIO IS 21.36 4 BUILT-IN BIAS RESISTOR 18 BUILT-IN BIAS RESISTOR RATIO 21 4 BUILT-IN BIAS RESISTOR RATIO 21.36 1 BUILT-IN BIAS RESISTOR RATIO IS 0.047 3 BUILT-IN BIAS RESISTOR RATIO IS 21 11 BUILT-IN BIAS RESISTOR RATIO IS 21.3 9 BUILT-IN BIAS RESISTOR RATIO IS 21.36 15 BUILT-IN BIAS RESISTOR RATIO IS 21.37 1 BULIT-IN BIAS RESISTOR RATIO IS 21 1 DIGITAL, BUILT IN BIAS RESISTOR RATIO 21.3 4 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 21.3 4 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 21.36 5 HIGH RELIABILITY, BUILT IN BIAS RESISTOR RATIO IS 21.36 1 HIGH RELIABILITYBUILT-IN BIAS RESISTANCE RATIO IS 21.36 1

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COLLECTOR 13

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Collector Current-Max (IC) (1)

100 mA 175

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2.5 pF 2 3.5 pF 9

Min (pF) - Max (pF)

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Collector-Emitter Voltage-Max (2)

50 V 137 80 V 1

Min (V) - Max (V)

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Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN RESISTOR 147

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DC Current Gain-Min (hFE) (3)

80.0 130 100.0 46 180.0 3

Min - Max

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TO-236 1 TO-236AB 9 TO-92 13

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O-PBCY-T3 13 R-PBCC-N3 10 R-PDSO-F3 15 R-PDSO-G3 91 R-PDSO-N3 3 R-PSIP-T3 16

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e0 18 e1 16 e2 1 e3 68 e4 3

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Manufacturer (23)

Comchip Technology Corporation Ltd 2 Diodes Incorporated 16 Galaxy Microelectronics 3 Galaxy Semi-Conductor Co Ltd 2 Jiangsu Changjiang Electronics Technology Co Ltd 5 LRC Leshan Radio Co Ltd 10 Micro Commercial Components 16 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 Nexperia 24 NXP Semiconductors 23 onsemi 5 Philips Semiconductors 7 Rectron Semiconductor 7 ROHM Semiconductor 54 Secos Corporation 6 Taiwan Semiconductor 19 Tak Cheong Electronics (Holdings) Co Ltd 1 Toshiba America Electronic Components 3 Unisonic Technologies Co Ltd 26 WEITRON INTERNATIONAL CO., LTD. 2 Weitronic Enterprise Co Ltd 1 Yangzhou Yangjie Electronics Co Ltd 2

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1 70

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Number of Elements (1)

1 182

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Number of Terminals (1)

3 148

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150.0 °C 80

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-65.0 °C 1 -55.0 °C 3

Min (°C) - Max (°C)

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PLASTIC/EPOXY 148

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RECTANGULAR 135 ROUND 13

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CHIP CARRIER 10 CYLINDRICAL 13 IN-LINE 16 SMALL OUTLINE 109

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Active 119 Contact Manufacturer 14 End Of Life 2 Not Recommended 5 Obsolete 73 Transferred 23

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No 7 Yes 36

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235 1 240 2 260 74 NOT SPECIFIED 36

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Polarity/Channel Type (2)

NPN 180 PNP 1

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100 mW 1 150 mW 6 200 mW 6 250 mW 4 300 mW 1

Min (W) - Max (W)

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100 mW 1 150 mW 18 200 mW 44 250 mW 15 300 mW 16 315 mW 1 500 mW 2 550 mW 2 600 mW 2 625 mW 6

Min (W) - Max (W)

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Surface Mount (2)

NO 38 YES 145

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Transition Frequency-Nom (fT) (3)

170 MHz 1 230 MHz 9 250 MHz 92

Min (MHz) - Max (MHz)

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