Parametric results for: DS1225AB-150 under SRAMs
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DS1225AB-150+
Maxim Integrated Products
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$15.8922 | Yes | Yes | Transferred | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | NON-VOLATILE SRAM MODULE | 10 YEAR DATA RETENTION | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 10 mA | 75 µA | 5.25 V | 4.75 V | CMOS | COMMERCIAL | R-PDMA-P28 | Not Qualified | e3 | 70 °C | 28 | PLASTIC/EPOXY | DIP | DIP28,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | MATTE TIN | PIN/PEG | 2.54 mm | DUAL | MAXIM INTEGRATED PRODUCTS INC | MODULE | DIP, DIP28,.6 | 28 | not_compliant | EAR99 | 8542.32.00.41 | ||||||||||||
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DS1225AB-150IND+
Maxim Integrated Products
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$18.9303 | Yes | Yes | Transferred | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | NON-VOLATILE SRAM MODULE | 10 YEAR DATA RETENTION | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 10 mA | 85 µA | 5.25 V | 4.75 V | CMOS | INDUSTRIAL | R-PDMA-P28 | Not Qualified | e3 | 85 °C | -40 °C | 28 | PLASTIC/EPOXY | DIP | DIP28,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | MATTE TIN | PIN/PEG | 2.54 mm | DUAL | MAXIM INTEGRATED PRODUCTS INC | MODULE | 0.720 INCH, ROHS COMPLIANT, DIP-28 | 28 | compliant | EAR99 | 8473.30.11.40 | |||||||||||
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DS1225AB-150IND
Rochester Electronics LLC
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Check for Price | No | No | Active | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | NON-VOLATILE SRAM MODULE | 10 YEAR DATA RETENTION | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 5.25 V | 4.75 V | CMOS | INDUSTRIAL | R-PDMA-P28 | COMMERCIAL | e0 | NOT SPECIFIED | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 28 | PLASTIC/EPOXY | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | TIN LEAD | PIN/PEG | DUAL | ROCHESTER ELECTRONICS LLC | MODULE | 0.720 INCH, DIP-28 | 28 | unknown | |||||||||||||||
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DS1225AB-150
Maxim Integrated Products
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Check for Price | No | No | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | NON-VOLATILE SRAM MODULE | 10 YEAR DATA RETENTION | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 5 mA | 75 µA | 5.25 V | 4.75 V | CMOS | COMMERCIAL | R-PDMA-P28 | Not Qualified | e0 | 1 | 70 °C | 28 | PLASTIC/EPOXY | DIP | DIP28,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | TIN LEAD | PIN/PEG | 2.54 mm | DUAL | 10.54 mm | 38.865 mm | 15.24 mm | MAXIM INTEGRATED PRODUCTS INC | DIP | 0.720 INCH, DIP-28 | 28 | not_compliant | EAR99 | 8542.32.00.41 | ||||||||
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DS1225AB-150IND+
Analog Devices Inc
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Check for Price | Yes | Active | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | NON-VOLATILE SRAM MODULE | 10 YEAR DATA RETENTION | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 10 mA | 85 µA | 5.25 V | 4.75 V | CMOS | INDUSTRIAL | R-PDMA-P28 | Not Qualified | e3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 28 | PLASTIC/EPOXY | DIP | DIP28,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | Matte Tin (Sn) | PIN/PEG | 2.54 mm | DUAL | ANALOG DEVICES INC | N/A | 0.720 INCH, ROHS COMPLIANT, DIP-28 | 28 | compliant | N/A | 2002-10-30 | Analog Devices | |||||||||
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DS1225AB-150IND
Maxim Integrated Products
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Check for Price | No | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | NON-VOLATILE SRAM MODULE | 10 YEAR DATA RETENTION | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 5 mA | 85 µA | 5.25 V | 4.75 V | CMOS | INDUSTRIAL | R-PDMA-P28 | Not Qualified | e0 | 85 °C | -40 °C | 28 | PLASTIC/EPOXY | DIP | DIP28,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | TIN LEAD | PIN/PEG | 2.54 mm | DUAL | MAXIM INTEGRATED PRODUCTS INC | MODULE | DIP, DIP28,.6 | 28 | not_compliant | EAR99 | 8473.30.11.40 | ||||||||||||
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DS1225AB-150
Dallas Semiconductor
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Check for Price | No | Transferred | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | NON-VOLATILE SRAM MODULE | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 5 mA | 75 µA | 5.25 V | 4.75 V | CMOS | COMMERCIAL | R-PDIP-T28 | Not Qualified | e0 | 70 °C | 28 | PLASTIC/EPOXY | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | DALLAS SEMICONDUCTOR | 0.720 INCH, EXTENDED, DIP-28 | unknown | ||||||||||||||||||
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DS1225AB-150
Rochester Electronics LLC
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Check for Price | No | No | Active | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | NON-VOLATILE SRAM MODULE | 10 YEAR DATA RETENTION | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 5.25 V | 4.75 V | CMOS | COMMERCIAL | R-PDMA-P28 | COMMERCIAL | e0 | 1 | 70 °C | 240 | NOT SPECIFIED | 28 | PLASTIC/EPOXY | DIP | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | TIN LEAD | PIN/PEG | 2.54 mm | DUAL | 10.54 mm | 38.865 mm | 15.24 mm | ROCHESTER ELECTRONICS LLC | MODULE | 0.720 INCH, DIP-28 | 28 | unknown | |||||||||||
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DS1225AB-150-IND
Dallas Semiconductor
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Check for Price | No | Transferred | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | NON-VOLATILE SRAM MODULE | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 5 mA | 85 µA | 5.25 V | 4.75 V | CMOS | INDUSTRIAL | R-PDIP-T28 | Not Qualified | e0 | 85 °C | -40 °C | 28 | PLASTIC/EPOXY | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | DALLAS SEMICONDUCTOR | unknown | ||||||||||||||||||
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DS1225AB-150+
Analog Devices Inc
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Check for Price | Yes | Active | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | NON-VOLATILE SRAM MODULE | 10 YEAR DATA RETENTION | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 10 mA | 75 µA | 5.25 V | 4.75 V | CMOS | COMMERCIAL | R-PDMA-P28 | Not Qualified | e3 | 70 °C | 28 | PLASTIC/EPOXY | DIP | DIP28,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | Matte Tin (Sn) - annealed | PIN/PEG | 2.54 mm | DUAL | ANALOG DEVICES INC | 0.720 INCH, ROHS COMPLIANT, DIP-28 | compliant | Analog Devices |