Parametric results for: DQ4B under Flash Memories

All Filters Access Time-Max Additional Feature Clock Frequency-Max (fCLK) Command User Interface Common Flash Interface Data Polling Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (8)

90 ns 2 100 ns 17 120 ns 17 150 ns 17 170 ns 16 200 ns 9 250 ns 9 300 ns 9

Min (ns) - Max (ns)

102 hits Apply

100 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS 12 1000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS 6 1000 PROGRAM/ERASE CYCLES 4 10000 PROGRAM/ERASE CYCLES 4 BULK ERASE 24

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Clock Frequency-Max (fCLK) (2)

50 MHz 2 52 MHz 3

Min (MHz) - Max (MHz)

102 hits Apply

NO 28 YES 62

102 hits Apply

NO 2

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NO 78 YES 12

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10 18

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100.0 Write/Erase Cycles 18 1000.0 Write/Erase Cycles 22 10000.0 Write/Erase Cycles 24 100000.0 Write/Erase Cycles 8

Min (Write/EraseCycles) - Max (Write/EraseCycles)

102 hits Apply

R-GDIP-T32 18 R-PBGA-B100 4 R-PDSO-G32 56 R-PDSO-G40 12 R-XDIP-T28 4 R-XDIP-T32 6 R-XUUC-N8 2

102 hits Apply

e0 28 e1 1

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15 mm 2 18 mm 4 18.415 mm 56

Min (mm) - Max (mm)

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Manufacturer (5)

LSI Corporation 28 Micron Technology Inc 4 SanDisk Corporation 1 Texas Instruments 68 Western Digital Corp 1

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Memory Density (8)

131.072 kbit 4 524.288 kbit 32 1.0486 Mbit 40 2.0972 Mbit 8 4.1943 Mbit 12 34.3597 Gbit 2 137.439 Gbit 1 274.8779 Gbit 2

Min (bit) - Max (bit)

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FLASH 96 FLASH CARD 6

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Memory Width (1)

8 101

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1.0 80

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128 18 16 12

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100 4 28 4 32 80 40 12 8 2

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16.384 k 4 65.536 k 32 131.072 k 40 262.144 k 8 524.288 k 12 4.295 G 2 17.1799 G 1 34.3597 G 2

Min (words) - Max (words)

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16000.0 4 64000.0 32 128000.0 40 256000.0 8 512000.0 12 4.0E9 2 1.6E10 1 3.2E10 2

Min - Max

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ASYNCHRONOUS 74 SYNCHRONOUS 5

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70.0 °C 28 85.0 °C 5 125.0 °C 68

Min (°C) - Max (°C)

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-40.0 °C 71 -25.0 °C 2 0.0 °C 28

Min (°C) - Max (°C)

102 hits Apply

Organization (8)

128KX8 40 16GX8 1 16KX8 4 256KX8 8 32GX8 2 4GX8 2 512KX8 12 64KX8 32

102 hits Apply

3-STATE 50

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CERAMIC 10 CERAMIC, GLASS-SEALED 18 PLASTIC/EPOXY 72 UNSPECIFIED 2

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DIE 2 DIP 28 LBGA 4 TSOP1 56 TSSOP 12

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BGA100,10X17,40 3 DIP28,.6 4 DIP32(UNSPEC) 6 DIP32,.6 18 TSOP32,.8 8 TSSOP32,.8,20 40 TSSOP40,.8,20 12

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RECTANGULAR 102

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GRID ARRAY, LOW PROFILE 4 IN-LINE 28 SMALL OUTLINE, THIN PROFILE 56 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 12 UNCASED CHIP 2

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Sector Size (3)

1K 9 32K 12 512 9

102 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 96

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