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Parametric » Memory » SRAMs

Parametric results for: DPS256S8BN-70I under SRAMs

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Select Parts		Part Number

		DPS256S8BN-70I B&B Electronics Manufacturing Company
		DPS256S8BN-70I Twilight Technology Inc

				Most Relevant					Technical																	Compliance			Operating Conditions				Physical											Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	I/O Type	Number of Functions	Number of Ports	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Output Enable	Parallel/Serial	Standby Current-Max	Standby Voltage-Min	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

Check for Price

No

Transferred

2.0972 Mbit

8

256KX8

5 V

70 ns

SRAM MODULE

COMMON

1

1

256000

262.144 k

ASYNCHRONOUS

3-STATE

YES

PARALLEL

800 µA

2 V

165 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

R-CDMA-T32

Not Qualified

e0

85 °C

-40 °C

32

CERAMIC, METAL-SEALED COFIRED

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

DPAC TECHNOLOGIES CORP

MODULE

DIP, DIP32,.6

32

unknown

3A991.B.2.A

8542.32.00.41

Check for Price

No

No

Contact Manufacturer

2.0972 Mbit

8

256KX8

5 V

70 ns

SRAM MODULE

COMMON

1

256000

262.144 k

ASYNCHRONOUS

3-STATE

PARALLEL

800 µA

2 V

165 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

R-CDMA-T32

Not Qualified

85 °C

-40 °C

NOT SPECIFIED

NOT SPECIFIED

32

CERAMIC, METAL-SEALED COFIRED

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

THROUGH-HOLE

2.54 mm

DUAL

TWILIGHT TECHNOLOGY INC

MODULE

DIP, DIP32,.6

32

unknown

3A991.B.2.A

8542.32.00.41

Compare

B&B Electronics Manufacturing Company

Check for Price

No

Transferred

2.0972 Mbit

8

256KX8

5 V

70 ns

SRAM MODULE

COMMON

1

1

256000

262.144 k

ASYNCHRONOUS

3-STATE

YES

PARALLEL

800 µA

2 V

165 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

R-CDMA-T32

Not Qualified

e0

85 °C

-40 °C

32

CERAMIC, METAL-SEALED COFIRED

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

DPAC TECHNOLOGIES CORP

MODULE

DIP, DIP32,.6

32

unknown

3A991.B.2.A

8542.32.00.41

Twilight Technology Inc

Check for Price

No

No

Contact Manufacturer

2.0972 Mbit

8

256KX8

5 V

70 ns

SRAM MODULE

COMMON

1

256000

262.144 k

ASYNCHRONOUS

3-STATE

PARALLEL

800 µA

2 V

165 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

R-CDMA-T32

Not Qualified

85 °C

-40 °C

NOT SPECIFIED

NOT SPECIFIED

32

CERAMIC, METAL-SEALED COFIRED

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

THROUGH-HOLE

2.54 mm

DUAL

TWILIGHT TECHNOLOGY INC

MODULE

DIP, DIP32,.6

32

unknown

3A991.B.2.A

8542.32.00.41