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Parametric » Memory » EEPROMs

Parametric results for: DPE512S8N-13B under EEPROMs

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Select Parts		Part Number

		DPE512S8N-13B B&B Electronics Manufacturing Company
		DPE512S8N-13B Twilight Technology Inc

				Most Relevant					Technical																					Compliance			Operating Conditions					Physical											Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	Additional Feature	Data Polling	Data Retention Time-Min	Number of Functions	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Page Size	Parallel/Serial	Programming Voltage	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	Toggle Bit	Write Cycle Time-Max (tWC)	Write Protection	JESD-30 Code	Qualification Status	JESD-609 Code	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Screening Level	Time@Peak Reflow Temperature-Max (s)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

Check for Price

No

Transferred

4.1943 Mbit

8

512KX8

5 V

135 ns

EEPROM MODULE

DATA RETENTION > 10 YEARS

YES

10

1

512000

524.288 k

ASYNCHRONOUS

3-STATE

128 words

PARALLEL

5 V

3 mA

90 µA

5.5 V

4.5 V

CMOS

MILITARY

NO

10 ms

SOFTWARE

R-CDMA-T32

Not Qualified

e0

125 °C

-55 °C

MIL-STD-883 Class B

32

CERAMIC, METAL-SEALED COFIRED

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

DPAC TECHNOLOGIES CORP

MODULE

DIP, DIP32,.6

32

unknown

3A001.A.2.C

8542.32.00.51

Check for Price

No

No

Contact Manufacturer

4.1943 Mbit

8

512KX8

5 V

135 ns

EEPROM MODULE

DATA RETENTION > 10 YEARS

YES

10

1

512000

524.288 k

ASYNCHRONOUS

128 words

PARALLEL

5 V

3 mA

90 µA

5.5 V

4.5 V

CMOS

MILITARY

NO

10 ms

SOFTWARE

R-CDMA-T32

Not Qualified

125 °C

-55 °C

NOT SPECIFIED

MIL-STD-883 Class B

NOT SPECIFIED

32

CERAMIC, METAL-SEALED COFIRED

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

THROUGH-HOLE

2.54 mm

DUAL

TWILIGHT TECHNOLOGY INC

MODULE

DIP, DIP32,.6

32

unknown

3A001.A.2.C

8542.32.00.51

Compare

B&B Electronics Manufacturing Company

Check for Price

No

Transferred

4.1943 Mbit

8

512KX8

5 V

135 ns

EEPROM MODULE

DATA RETENTION > 10 YEARS

YES

10

1

512000

524.288 k

ASYNCHRONOUS

3-STATE

128 words

PARALLEL

5 V

3 mA

90 µA

5.5 V

4.5 V

CMOS

MILITARY

NO

10 ms

SOFTWARE

R-CDMA-T32

Not Qualified

e0

125 °C

-55 °C

MIL-STD-883 Class B

32

CERAMIC, METAL-SEALED COFIRED

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

DPAC TECHNOLOGIES CORP

MODULE

DIP, DIP32,.6

32

unknown

3A001.A.2.C

8542.32.00.51

Twilight Technology Inc

Check for Price

No

No

Contact Manufacturer

4.1943 Mbit

8

512KX8

5 V

135 ns

EEPROM MODULE

DATA RETENTION > 10 YEARS

YES

10

1

512000

524.288 k

ASYNCHRONOUS

128 words

PARALLEL

5 V

3 mA

90 µA

5.5 V

4.5 V

CMOS

MILITARY

NO

10 ms

SOFTWARE

R-CDMA-T32

Not Qualified

125 °C

-55 °C

NOT SPECIFIED

MIL-STD-883 Class B

NOT SPECIFIED

32

CERAMIC, METAL-SEALED COFIRED

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

THROUGH-HOLE

2.54 mm

DUAL

TWILIGHT TECHNOLOGY INC

MODULE

DIP, DIP32,.6

32

unknown

3A001.A.2.C

8542.32.00.51