Parametric results for: DF900R12IP4DV under IGBTs

All Filters Case Connection Collector-Emitter Voltage-Max Configuration Gate-Emitter Thr Voltage-Max Gate-Emitter Voltage-Max JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ISOLATED 2

2 hits Apply

Collector-Emitter Voltage-Max (1)

1.2 kV 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE AND THERMISTOR 2

2 hits Apply

Gate-Emitter Thr Voltage-Max (1)

6.5 V 1

2 hits Apply

20 V 1

2 hits Apply

R-PUFM-X10 2

2 hits Apply

Manufacturer (1)

Infineon Technologies AG 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

10 2

2 hits Apply

150.0 °C 1

2 hits Apply

-40.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Not Recommended 2

2 hits Apply

NOT SPECIFIED 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

5.1 kW 1

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply