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TD2147H1
Intel Corporation
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Check for Price | No | Obsolete | 4.096 kbit | 1 | 4KX1 | 5 V | 35 ns | STANDARD SRAM | SEPARATE | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4.5 V | 180 µA | MOS | INDUSTRIAL | R-XDIP-T18 | Not Qualified | e0 | 85 °C | -40 °C | 18 | CERAMIC | DIP | DIP18,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | INTEL CORP | DIP, DIP18,.3 | unknown | EAR99 | 8542.32.00.41 | ||||||||||||||
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SYD2147H-1
Synertek Inc
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Check for Price | No | Obsolete | 4.096 kbit | 1 | 4KX1 | 5 V | 35 ns | STANDARD SRAM | SEPARATE | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4.5 V | 160 µA | MOS | COMMERCIAL | R-XDIP-T18 | Not Qualified | e0 | 70 °C | 18 | CERAMIC | DIP | DIP18,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | SYNERTEK INC | DIP, DIP18,.3 | unknown | EAR99 | 8542.32.00.41 | |||||||||||||||
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D2147H1
Intel Corporation
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Check for Price | No | Obsolete | 4.096 kbit | 1 | 4KX1 | 5 V | 35 ns | STANDARD SRAM | SEPARATE | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4.5 V | 180 µA | MOS | COMMERCIAL | R-XDIP-T18 | Not Qualified | e0 | 70 °C | 18 | CERAMIC | DIP | DIP18,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | INTEL CORP | DIP, DIP18,.3 | unknown | EAR99 | 8542.32.00.41 | |||||||||||||||
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QD2147H-1
Intel Corporation
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Check for Price | No | No | Active | 4.096 kbit | 1 | 4KX1 | 5 V | 35 ns | STANDARD SRAM | AUTOMATIC POWER-DOWN | SEPARATE | 1 | 1 | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 4.5 V | 180 µA | 5.5 V | 4.5 V | NMOS | COMMERCIAL | R-GDIP-T18 | Not Qualified | e0 | 70 °C | 18 | CERAMIC, GLASS-SEALED | DIP | DIP18,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 22.86 mm | 7.62 mm | INTEL CORP | DIP, DIP18,.3 | compliant | EAR99 | 8542.32.00.41 | DIP | 18 | |||
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LD2147H1
Intel Corporation
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Check for Price | No | Obsolete | 4.096 kbit | 1 | 4KX1 | 5 V | 35 ns | STANDARD SRAM | SEPARATE | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4.5 V | 180 µA | MOS | INDUSTRIAL | R-XDIP-T18 | e0 | 85 °C | -40 °C | 18 | CERAMIC | DIP | DIP18,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | INTEL CORP | DIP, DIP18,.3 | unknown | EAR99 | 8542.32.00.41 |