Parametric results for: D2012UK under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

LOW NOISE 6

6 hits Apply

SOURCE 6

6 hits Apply

Configuration (1)

SINGLE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

65 V 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 6

6 hits Apply

R-CDFM-F2 6

6 hits Apply

e4 4

6 hits Apply

Manufacturer (2)

TT Electronics Power and Hybrid / Semelab Limited 3 TT Electronics Resistors 3

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

2 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

200.0 °C 6

6 hits Apply

CERAMIC, METAL-SEALED COFIRED 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

FLANGE MOUNT 6

6 hits Apply

Active 6

6 hits Apply

No 1 Yes 1

6 hits Apply

NOT SPECIFIED 2

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply