Parametric results for: D1012UK.01 under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

LOW NOISE 2

2 hits Apply

SOURCE 2

2 hits Apply

Configuration (1)

COMMON SOURCE, 2 ELEMENTS 2

2 hits Apply

DS Breakdown Voltage-Min (1)

70 V 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 2

2 hits Apply

R-CDFM-F4 2

2 hits Apply

Manufacturer (2)

TT Electronics Power and Hybrid / Semelab Limited 1 TT Electronics Resistors 1

2 hits Apply

Number of Elements (1)

2 2

2 hits Apply

Number of Terminals (1)

4 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

200.0 °C 2

2 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Active 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply