Parametric results for: CY8C20110 under Other Memory ICs

All Filters Additional Feature JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup)

SRAM IS ORGANISED AS 512MB 4

6 hits Apply

R-PDSO-G16 2 S-XQCC-N16 2

6 hits Apply

e4 4

6 hits Apply

3 mm 2 9.893 mm 2

Min (mm) - Max (mm)

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Manufacturer (2)

Cypress Semiconductor 3 Infineon Technologies AG 3

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Memory Density (1)

2.048 kbit 4

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MEMORY CIRCUIT 6

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Memory Width (1)

1 4

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3 5

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1.0 4

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16 4

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2.048 k 4

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2000.0 4

6 hits Apply

SYNCHRONOUS 4

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85.0 °C 4

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-40.0 °C 4

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Organization (1)

2KX1 4

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PLASTIC/EPOXY 2 UNSPECIFIED 2

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SOP 2 VQCCN 2

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RECTANGULAR 2 SQUARE 2

6 hits Apply

CHIP CARRIER, VERY THIN PROFILE 2 SMALL OUTLINE 2

6 hits Apply

Supply Voltage-Nom (Vsup) (1)

3 V 4

6 hits Apply