Parametric results for: CY7C1069GN30-10ZSXI under SRAMs

All Filters Access Time-Max JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

10 ns 4

4 hits Apply

R-PDSO-G54 4

4 hits Apply

22.415 mm 4

4 hits Apply

Manufacturer (2)

Cypress Semiconductor 2 Infineon Technologies AG 2

4 hits Apply

Memory Density (1)

16.7772 Mbit 4

4 hits Apply

STANDARD SRAM 4

4 hits Apply

Memory Width (1)

8 4

4 hits Apply

3 3

4 hits Apply

1.0 4

4 hits Apply

54 4

4 hits Apply

2.0972 M 4

4 hits Apply

2000000.0 4

4 hits Apply

ASYNCHRONOUS 4

4 hits Apply

85.0 °C 4

4 hits Apply

-40.0 °C 4

4 hits Apply

Organization (1)

2MX8 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

TSOP2 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE, THIN PROFILE 4

4 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 4

4 hits Apply