Parametric results for: CY7C10612GE30-10ZSXIT under SRAMs

All Filters Access Time-Max I/O Type JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

10 ns 2

2 hits Apply

COMMON 2

2 hits Apply

R-PDSO-G54 2

2 hits Apply

22.415 mm 2

2 hits Apply

Manufacturer (2)

Cypress Semiconductor 1 Infineon Technologies AG 1

2 hits Apply

Memory Density (1)

16.7772 Mbit 2

2 hits Apply

STANDARD SRAM 2

2 hits Apply

Memory Width (1)

16 2

2 hits Apply

3 2

2 hits Apply

1.0 2

2 hits Apply

1 2

2 hits Apply

54 2

2 hits Apply

1.0486 M 2

2 hits Apply

1000000.0 2

2 hits Apply

ASYNCHRONOUS 2

2 hits Apply

85.0 °C 2

2 hits Apply

-40.0 °C 2

2 hits Apply

Organization (1)

1MX16 2

2 hits Apply

3-STATE 2

2 hits Apply

YES 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

TSOP2 2

2 hits Apply

TSOP54,.46,32 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE, THIN PROFILE 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 2

2 hits Apply