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CY14E104N-BA45XI
Cypress Semiconductor
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Check for Price | Yes | Obsolete | 4.1943 Mbit | 16 | 256KX16 | 5 V | 45 ns | NON-VOLATILE SRAM | 1 | 256000 | 262.144 k | ASYNCHRONOUS | PARALLEL | 3 mA | 52 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | e1 | 85 °C | -40 °C | 260 | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 750 µm | BOTTOM | 1.2 mm | 10 mm | 6 mm | CYPRESS SEMICONDUCTOR CORP | BGA | TFBGA, BGA48,6X8,30 | 48 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||
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CY14E104N-BA45XIT
Cypress Semiconductor
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Check for Price | Yes | Obsolete | 4.1943 Mbit | 16 | 256KX16 | 5 V | 45 ns | NON-VOLATILE SRAM | 1 | 256000 | 262.144 k | ASYNCHRONOUS | PARALLEL | 3 mA | 52 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | e1 | 85 °C | -40 °C | 260 | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 750 µm | BOTTOM | 1.2 mm | 10 mm | 6 mm | CYPRESS SEMICONDUCTOR CORP | BGA | TFBGA, BGA48,6X8,30 | 48 | compliant | 3A991.B.2.A | 8542.32.00.41 |