Parametric results for: CTLDM7181M832D under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 3

5 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 3

5 hits Apply

DS Breakdown Voltage-Min (1)

20 V 3

5 hits Apply

Drain Current-Max (ID) (1)

1 A 3

5 hits Apply

Drain-source On Resistance-Max (1)

100 mΩ 3

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

5 hits Apply

R-PDSO-N8 3

5 hits Apply

e3 1

5 hits Apply

Manufacturer (1)

Central Semiconductor Corp 5

5 hits Apply

1 3

5 hits Apply

Number of Elements (1)

2 3

5 hits Apply

Number of Terminals (1)

8 3

5 hits Apply

ENHANCEMENT MODE 3

5 hits Apply

150.0 °C 3

5 hits Apply

PLASTIC/EPOXY 3

5 hits Apply

RECTANGULAR 3

5 hits Apply

SMALL OUTLINE 3

5 hits Apply

Obsolete 5

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL AND P-CHANNEL 3

5 hits Apply

1.65 W 2

5 hits Apply

Surface Mount (1)

YES 3

5 hits Apply