Parametric results for: CPH3355 under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 6

8 hits Apply

DS Breakdown Voltage-Min (1)

30 V 6

8 hits Apply

Drain Current-Max (ID) (1)

2.5 A 7

8 hits Apply

Drain-source On Resistance-Max (1)

156 mΩ 6

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 7

8 hits Apply

TO-236 6

8 hits Apply

R-PDSO-G3 6

8 hits Apply

e6 2

8 hits Apply

Manufacturer (3)

onsemi 3 SANYO Electric Co Ltd 2 SANYO Semiconductor Co Ltd 3

8 hits Apply

1 2

8 hits Apply

Number of Elements (1)

1 7

8 hits Apply

Number of Terminals (1)

3 6

8 hits Apply

ENHANCEMENT MODE 7

8 hits Apply

150.0 °C 4

8 hits Apply

PLASTIC/EPOXY 6

8 hits Apply

RECTANGULAR 6

8 hits Apply

SMALL OUTLINE 6

8 hits Apply

Obsolete 5 Transferred 3

8 hits Apply

Yes 2

8 hits Apply

260 2

8 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 7

8 hits Apply

1 W 4

8 hits Apply

Surface Mount (1)

YES 7

8 hits Apply