Parametric results for: CJ1012 under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

20 V 3

4 hits Apply

Drain Current-Max (ID) (1)

500 mA 3

4 hits Apply

Drain-source On Resistance-Max (1)

700 mΩ 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

12 pF 2

4 hits Apply

R-PDSO-G3 3

4 hits Apply

Manufacturer (3)

Comchip Technology Corporation Ltd 2 Jiangsu Changjiang Electronics Technology Co Ltd 1 Suzhou Good-Ark Electronics Co Ltd 1

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

3 3

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

150.0 °C 2

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

SMALL OUTLINE 3

4 hits Apply

Active 2 Contact Manufacturer 1 Not Recommended 1

4 hits Apply

NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

150 mW 2

4 hits Apply

275 mW 2

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply