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CIG22H4R7MNE
Samsung Semiconductor
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Check for Price | Yes | Active | GENERAL PURPOSE INDUCTOR | 4.7 µH | 233 mΩ | 20 % | 800 mA | Ferrite | 1008 | CIG | CIG | 125 °C | -40 °C | Chip | SMT | TR, Embossed, 7 Inch | 1.1 mm | 2.5 mm | 2 mm | SAMSUNG SEMICONDUCTOR INC | 1008 | compliant | ||||||||||||||
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CIG22H4R7MNE
Samsung Electro-Mechanics
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Check for Price | Yes | Obsolete | GENERAL PURPOSE INDUCTOR | 4.7 µH | 233 mΩ | 20 % | YES | 1 MHz | 800 mA | FERRITE | 1008 | POWER INDUCTOR | 1 | YES | DCR MEASURED AT 20% TOLERANCE | 125 °C | -40 °C | Rectangular | 2 | SMT | TR, Embossed, 7 Inch | RECTANGULAR PACKAGE | DUAL ENDED | WRAPAROUND | 1.1 mm | 2.5 mm | 2 mm | SAMSUNG ELECTRO-MECHANICS | 1008 | compliant | EAR99 | 8504.50.80.00 |