Parametric results for: CG2H40120P under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Gain-Min (Gp) Surface Mount

SOURCE 2

2 hits Apply

Configuration (1)

SINGLE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

84 V 2

2 hits Apply

Drain Current-Max (ID) (1)

12 A 2

2 hits Apply

HIGH ELECTRON MOBILITY 2

2 hits Apply

1.5 pF 2

2 hits Apply

Highest Frequency Band (1)

S BAND 2

2 hits Apply

R-CDFP-F2 2

2 hits Apply

Manufacturer (2)

Cree, Inc. 1 Wolfspeed 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

2 2

2 hits Apply

DEPLETION MODE 2

2 hits Apply

65.0 °C 2

2 hits Apply

-40.0 °C 2

2 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLATPACK 2

2 hits Apply

Transferred 2

2 hits Apply

NOT SPECIFIED 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

Power Gain-Min (Gp) (1)

18.5 dB 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply