Parametric results for: CFY67 under RF Small Signal Field-Effect Transistors

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Manufacturer Part Number: cfy67
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CFY67-08H
TriQuint Semiconductor
Check for Price Transferred N-CHANNEL YES SINGLE 4 3.5 V K BAND 1 11 dB 60 mA LOW NOISE HIGH ELECTRON MOBILITY DEPLETION MODE AMPLIFIER GALLIUM ARSENIDE X-CXMW-F4 e4 Not Qualified ESA/SCC 5613/004 150 °C SOURCE CERAMIC, METAL-SEALED COFIRED UNSPECIFIED MICROWAVE GOLD FLAT UNSPECIFIED TRIQUINT SEMICONDUCTOR INC MICROWAVE, X-CXMW-F4 4 unknown EAR99
CFY67-10PH
Qorvo
Check for Price Obsolete N-CHANNEL YES SINGLE 4 3.5 V K BAND 1 10.5 dB 60 mA LOW NOISE HIGH ELECTRON MOBILITY DEPLETION MODE AMPLIFIER GALLIUM ARSENIDE X-CXMW-F4 e4 Not Qualified ESA/SCC 5613/004 SOURCE CERAMIC, METAL-SEALED COFIRED UNSPECIFIED MICROWAVE GOLD FLAT UNSPECIFIED QORVO INC MICROWAVE, X-CXMW-F4 compliant EAR99
CFY67-10H
Infineon Technologies AG
Check for Price Transferred N-CHANNEL YES SINGLE 4 3.5 V K BAND 1 10.5 dB 60 mA HIGH RELIABILITY HIGH ELECTRON MOBILITY DEPLETION MODE 200 mW AMPLIFIER Al/In GALLIUM ARSENIDE O-CRDB-F4 e3 Not Qualified 150 °C SOURCE CERAMIC, METAL-SEALED COFIRED ROUND DISK BUTTON MATTE TIN FLAT RADIAL INFINEON TECHNOLOGIES AG DISK BUTTON, O-XRDB-F4 4 compliant EAR99 8541.21.00.95
CFY67-08PH
Qorvo
Check for Price Active N-CHANNEL YES SINGLE 4 3.5 V K BAND 1 11 dB 60 mA LOW NOISE HIGH ELECTRON MOBILITY DEPLETION MODE AMPLIFIER GALLIUM ARSENIDE X-CXMW-F4 e4 Not Qualified ESA/SCC 5613/004 SOURCE CERAMIC, METAL-SEALED COFIRED UNSPECIFIED MICROWAVE GOLD FLAT UNSPECIFIED QORVO INC MICROWAVE, X-CXMW-F4 compliant EAR99
CFY67-10PP
TriQuint Semiconductor
Check for Price Transferred N-CHANNEL YES SINGLE 4 3.5 V K BAND 1 10.5 dB 60 mA LOW NOISE HIGH ELECTRON MOBILITY DEPLETION MODE AMPLIFIER GALLIUM ARSENIDE X-CXMW-F4 e4 Not Qualified ESA/SCC 5613/004 150 °C SOURCE CERAMIC, METAL-SEALED COFIRED UNSPECIFIED MICROWAVE GOLD FLAT UNSPECIFIED TRIQUINT SEMICONDUCTOR INC MICROWAVE, X-CXMW-F4 4 unknown EAR99
CFY67-08PH
TriQuint Semiconductor
Check for Price Transferred N-CHANNEL YES SINGLE 4 3.5 V K BAND 1 11 dB 60 mA LOW NOISE HIGH ELECTRON MOBILITY DEPLETION MODE AMPLIFIER GALLIUM ARSENIDE X-CXMW-F4 e4 Not Qualified ESA/SCC 5613/004 150 °C SOURCE CERAMIC, METAL-SEALED COFIRED UNSPECIFIED MICROWAVE GOLD FLAT UNSPECIFIED TRIQUINT SEMICONDUCTOR INC MICROWAVE, X-CXMW-F4 4 unknown EAR99
CFY67-06P
Siemens
Check for Price Transferred N-CHANNEL YES SINGLE 4 3.5 V K BAND 1 11.5 dB 60 mA LOW NOISE HIGH ELECTRON MOBILITY DEPLETION MODE AMPLIFIER GALLIUM ARSENIDE O-CRDB-F4 Not Qualified ESA/SCC 5613/004 SOURCE CERAMIC, METAL-SEALED COFIRED ROUND DISK BUTTON FLAT RADIAL SIEMENS A G DISK BUTTON, O-CRDB-F4 unknown EAR99
CFY67-10PS
TriQuint Semiconductor
Check for Price Transferred N-CHANNEL YES SINGLE 4 3.5 V K BAND 1 10.5 dB 60 mA LOW NOISE HIGH ELECTRON MOBILITY DEPLETION MODE AMPLIFIER GALLIUM ARSENIDE X-CXMW-F4 e4 Not Qualified ESA/SCC 5613/004 150 °C SOURCE CERAMIC, METAL-SEALED COFIRED UNSPECIFIED MICROWAVE GOLD FLAT UNSPECIFIED TRIQUINT SEMICONDUCTOR INC MICROWAVE, X-CXMW-F4 4 unknown EAR99
CFY67-10PH
Infineon Technologies AG
Check for Price Transferred N-CHANNEL YES SINGLE 4 3.5 V K BAND 1 10.5 dB 60 mA HIGH RELIABILITY HIGH ELECTRON MOBILITY DEPLETION MODE 200 mW AMPLIFIER Al/In GALLIUM ARSENIDE O-CRDB-F4 e3 Not Qualified 150 °C SOURCE CERAMIC, METAL-SEALED COFIRED ROUND DISK BUTTON MATTE TIN FLAT RADIAL INFINEON TECHNOLOGIES AG DISK BUTTON, O-XRDB-F4 4 compliant EAR99 8541.21.00.95
CFY67-08P
Siemens
Check for Price Transferred N-CHANNEL YES SINGLE 4 3.5 V K BAND 1 11 dB 60 mA LOW NOISE HIGH ELECTRON MOBILITY DEPLETION MODE AMPLIFIER GALLIUM ARSENIDE O-CRDB-F4 Not Qualified ESA/SCC 5613/004 SOURCE CERAMIC, METAL-SEALED COFIRED ROUND DISK BUTTON FLAT RADIAL SIEMENS A G DISK BUTTON, O-CRDB-F4 unknown EAR99