Parametric results for: CAT93C66S-TE13 under EEPROMs

All Filters Additional Feature Alternate Memory Width Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup)

1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION 3

4 hits Apply

8 4

4 hits Apply

Clock Frequency-Max (fCLK) (1)

500 kHz 4

4 hits Apply

100 2

4 hits Apply

1000000.0 Write/Erase Cycles 1

4 hits Apply

R-PDSO-G8 4

4 hits Apply

e0 4

4 hits Apply

4.9 mm 4

4 hits Apply

Manufacturer (3)

Catalyst Semiconductor 2 onsemi 1 Rochester Electronics LLC 1

4 hits Apply

Memory Density (1)

4.096 kbit 4

4 hits Apply

EEPROM 4

4 hits Apply

Memory Width (1)

16 4

4 hits Apply

NOT SPECIFIED 1

4 hits Apply

1.0 4

4 hits Apply

8 4

4 hits Apply

256 words 4

4 hits Apply

256.0 4

4 hits Apply

SYNCHRONOUS 4

4 hits Apply

70.0 °C 4

4 hits Apply

0.0 °C 4

4 hits Apply

Organization (1)

256X16 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

SOP 4

4 hits Apply

SOP8,.25 1

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 4

4 hits Apply