Parametric results for: CAT28C257N-12T under EEPROMs

All Filters Access Time-Max Additional Feature Command User Interface Data Polling Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Page Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

120 ns 3

3 hits Apply

100 YEAR DATA RETENTION 1 10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS 2

3 hits Apply

NO 2

3 hits Apply

YES 2

3 hits Apply

100 2

3 hits Apply

100000.0 Write/Erase Cycles 2

3 hits Apply

R-PQCC-J32 3

3 hits Apply

e0 2

3 hits Apply

13.97 mm 3

3 hits Apply

Manufacturer (3)

Catalyst Semiconductor 1 onsemi 1 Rochester Electronics LLC 1

3 hits Apply

Memory Density (1)

262.144 kbit 3

3 hits Apply

EEPROM 3

3 hits Apply

Memory Width (1)

8 3

3 hits Apply

1 1 3 2

3 hits Apply

1.0 3

3 hits Apply

32 3

3 hits Apply

32.768 k 3

3 hits Apply

32000.0 3

3 hits Apply

ASYNCHRONOUS 3

3 hits Apply

70.0 °C 3

3 hits Apply

0.0 °C 3

3 hits Apply

Organization (1)

32KX8 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

QCCJ 3

3 hits Apply

LDCC32,.5X.6 2

3 hits Apply

RECTANGULAR 3

3 hits Apply

CHIP CARRIER 3

3 hits Apply

128 words 2

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 3

3 hits Apply