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CAT24C04PI-1.8
Catalyst Semiconductor
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Check for Price | No | No | Obsolete | 4.096 kbit | 8 | 512X8 | 5 V | 100 kHz | EEPROM | I2C BUS SERIAL INTERFACE; AUTOMATIC WRITE | 100 | 1000000 Write/Erase Cycles | 1010DDMR | 1 | 512 | 512 words | SYNCHRONOUS | OPEN-DRAIN | SERIAL | I2C | 900 nA | 3 µA | 6 V | 1.8 V | CMOS | INDUSTRIAL | 10 ms | R-PDIP-T8 | Not Qualified | e0 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 9.36 mm | 7.62 mm | CATALYST SEMICONDUCTOR INC | DIP | DIP, DIP8,.3 | 8 | unknown | EAR99 | 8542.32.00.51 | ||
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CAT24C04PA-1.8
Catalyst Semiconductor
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Check for Price | No | Obsolete | 4.096 kbit | 8 | 512X8 | 5 V | 100 kHz | EEPROM | 100 | 1000000 Write/Erase Cycles | 1010DDMR | 1 | 512 | 512 words | SYNCHRONOUS | SERIAL | I2C | 900 nA | 3 µA | 6 V | 1.8 V | CMOS | INDUSTRIAL | 10 ms | R-PDIP-T8 | Not Qualified | e0 | 105 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | CATALYST SEMICONDUCTOR INC | DIP, DIP8,.3 | unknown | EAR99 | 8542.32.00.51 | ||||||||||
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CAT24C04PA
Catalyst Semiconductor
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Check for Price | No | Obsolete | 4.096 kbit | 8 | 512X8 | 5 V | 400 kHz | EEPROM | 100 | 1000000 Write/Erase Cycles | 1010DDMR | 1 | 512 | 512 words | SYNCHRONOUS | SERIAL | I2C | 900 nA | 3 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 10 ms | R-PDIP-T8 | Not Qualified | e0 | 105 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | CATALYST SEMICONDUCTOR INC | DIP, DIP8,.3 | unknown | EAR99 | 8542.32.00.51 | ||||||||||
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CAT24C04PA-2.5
Catalyst Semiconductor
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Check for Price | No | Obsolete | 4.096 kbit | 8 | 512X8 | 5 V | 100 kHz | EEPROM | 100 | 1000000 Write/Erase Cycles | 1010DDMR | 1 | 512 | 512 words | SYNCHRONOUS | SERIAL | I2C | 900 nA | 3 µA | 6 V | 2.5 V | CMOS | INDUSTRIAL | 10 ms | R-PDIP-T8 | Not Qualified | e0 | 105 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | CATALYST SEMICONDUCTOR INC | DIP, DIP8,.3 | unknown | EAR99 | 8542.32.00.51 | ||||||||||
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CAT24C04PA-2.7
Catalyst Semiconductor
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Check for Price | No | Obsolete | 4.096 kbit | 8 | 512X8 | 5 V | 100 kHz | EEPROM | 100 | 1000000 Write/Erase Cycles | 1010DDMR | 1 | 512 | 512 words | SYNCHRONOUS | SERIAL | I2C | 900 nA | 3 µA | 6 V | 2.7 V | CMOS | INDUSTRIAL | 10 ms | R-PDIP-T8 | Not Qualified | e0 | 105 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | CATALYST SEMICONDUCTOR INC | DIP, DIP8,.3 | unknown | EAR99 | 8542.32.00.51 | ||||||||||
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CAT24C04PI
Catalyst Semiconductor
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Check for Price | No | No | Obsolete | 4.096 kbit | 8 | 512X8 | 5 V | 400 kHz | EEPROM | I2C BUS SERIAL INTERFACE; AUTOMATIC WRITE | 100 | 1000000 Write/Erase Cycles | 1010DDMR | 1 | 512 | 512 words | SYNCHRONOUS | OPEN-DRAIN | SERIAL | I2C | 900 nA | 3 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 10 ms | R-PDIP-T8 | Not Qualified | e0 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 9.36 mm | 7.62 mm | CATALYST SEMICONDUCTOR INC | DIP | DIP, DIP8,.3 | 8 | unknown | EAR99 | 8542.32.00.51 | ||
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CAT24C04P-2.5
Catalyst Semiconductor
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Check for Price | No | No | Obsolete | 4.096 kbit | 8 | 512X8 | 5 V | 100 kHz | EEPROM | I2C BUS SERIAL INTERFACE; AUTOMATIC WRITE | 100 | 1000000 Write/Erase Cycles | 1010DDMR | 1 | 512 | 512 words | SYNCHRONOUS | OPEN-DRAIN | SERIAL | I2C | 900 nA | 3 µA | 6 V | 2.5 V | CMOS | COMMERCIAL | 10 ms | R-PDIP-T8 | Not Qualified | e0 | 70 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 9.36 mm | 7.62 mm | CATALYST SEMICONDUCTOR INC | DIP | DIP, DIP8,.3 | 8 | unknown | EAR99 | 8542.32.00.51 | |||
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CAT24C04P-2.7
Catalyst Semiconductor
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Check for Price | No | No | Obsolete | 4.096 kbit | 8 | 512X8 | 5 V | 100 kHz | EEPROM | I2C BUS SERIAL INTERFACE; AUTOMATIC WRITE | 100 | 1000000 Write/Erase Cycles | 1010DDMR | 1 | 512 | 512 words | SYNCHRONOUS | OPEN-DRAIN | SERIAL | I2C | 900 nA | 3 µA | 6 V | 2.7 V | CMOS | COMMERCIAL | 10 ms | R-PDIP-T8 | Not Qualified | e0 | 70 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 9.36 mm | 7.62 mm | CATALYST SEMICONDUCTOR INC | DIP | DIP, DIP8,.3 | 8 | unknown | EAR99 | 8542.32.00.51 | |||
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CAT24C04PI-2.7
Catalyst Semiconductor
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Check for Price | No | No | Obsolete | 4.096 kbit | 8 | 512X8 | 5 V | 100 kHz | EEPROM | I2C BUS SERIAL INTERFACE; AUTOMATIC WRITE | 100 | 1000000 Write/Erase Cycles | 1010DDMR | 1 | 512 | 512 words | SYNCHRONOUS | OPEN-DRAIN | SERIAL | I2C | 900 nA | 3 µA | 6 V | 2.7 V | CMOS | INDUSTRIAL | 10 ms | R-PDIP-T8 | Not Qualified | e0 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 9.36 mm | 7.62 mm | CATALYST SEMICONDUCTOR INC | DIP | DIP, DIP8,.3 | 8 | unknown | EAR99 | 8542.32.00.51 | ||
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CAT24C04P
Catalyst Semiconductor
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Check for Price | No | No | Obsolete | 4.096 kbit | 8 | 512X8 | 5 V | 400 kHz | EEPROM | I2C BUS SERIAL INTERFACE; AUTOMATIC WRITE | 100 | 1000000 Write/Erase Cycles | 1010DDMR | 1 | 512 | 512 words | SYNCHRONOUS | OPEN-DRAIN | SERIAL | I2C | 900 nA | 3 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | 10 ms | R-PDIP-T8 | Not Qualified | e0 | 70 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 9.36 mm | 7.62 mm | CATALYST SEMICONDUCTOR INC | DIP | 0.300 INCH, PLASTIC, DIP-8 | 8 | unknown | EAR99 | 8542.32.00.51 |