Parametric results for: BYV26E under Signal Diodes
Filter Your Search
1 - 10 of 21 results
|
Select parts from the table below to compare.
Compare
Compare
|
BYV26EGP-E3/54
Vishay Semiconductors
|
$0.2161 | Yes | Not Recommended | 1 A | 1.3 V | 75 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 kV | 1 | FREE WHEELING DIODE, HIGH RELIABILITY | 30 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-204AC | 175 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | VISHAY SEMICONDUCTORS | DO-15 | O-PALF-W2 | 2 | unknown | EAR99 | 8541.10.00.80 | Vishay | ||||||||||
|
|
BYV26EGP-E3/73
Vishay Semiconductors
|
$0.2161 | Yes | Not Recommended | 1 A | 1.3 V | 75 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 kV | 1 | FREE WHEELING DIODE, HIGH RELIABILITY | 30 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-204AC | 175 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | VISHAY SEMICONDUCTORS | DO-15 | O-PALF-W2 | 2 | unknown | EAR99 | 8541.10.00.80 | Vishay | ||||||||||
|
|
BYV26E-TAP
Vishay Semiconductors
|
$0.3502 | Yes | Active | 1 A | 1.3 V | 75 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 kV | 1 | AVALANCHE | 30 A | 1 | Not Qualified | E-LALF-W2 | DO-204AP | 1 | 175 °C | -55 °C | 260 | 10 | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | TIN SILVER | WIRE | AXIAL | VISHAY SEMICONDUCTORS | DO-204 | E-LALF-W2 | 2 | unknown | EAR99 | 8541.10.00.80 | Vishay | ||||||||
|
|
BYV26E-TR
Vishay Semiconductors
|
$0.3527 | Yes | Active | 1 A | 1.3 V | 75 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 kV | 1 | AVALANCHE | 30 A | 1 | Not Qualified | E-LALF-W2 | e2 | DO-204AP | 175 °C | -55 °C | 260 | 30 | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | Tin/Silver (Sn96.5Ag3.5) | WIRE | AXIAL | VISHAY SEMICONDUCTORS | DO-204 | E-LALF-W2 | 2 | unknown | EAR99 | 8541.10.00.80 | Vishay | ||||||||
|
|
BYV26EGP/74-E3
Vishay Semiconductors
|
Check for Price | Yes | Yes | Active | 1 A | 75 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 kV | 1 | FREE WHEELING DIODE | 1 | Not Qualified | O-PALF-W2 | e3 | DO-204AC | 175 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | VISHAY SEMICONDUCTORS | DO-15 | O-PALF-W2 | 2 | unknown | EAR99 | 8541.10.00.80 | ||||||||||||
|
|
BYV26E
EIC Semiconductor Inc
|
Check for Price | Yes | Active | 1 A | 2.5 V | 75 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 kV | 1 | AVALANCHE | 30 A | 1 | 175 °C | EIC SEMICONDUCTOR CO LTD | compliant | EAR99 | ||||||||||||||||||||||||||||
|
|
BYV26E
Galaxy Microelectronics
|
Check for Price | Yes | Active | 1 A | 2.5 V | 75 ns | 5 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 kV | 1 | SUPER FAST RECOVERY | 30 A | 1 | 1 kV | O-PALF-W2 | DO-41 | 125 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | WIRE | AXIAL | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | DO-41 | unknown | EAR99 | 8541.10.00.80 | ||||||||||||
|
|
BYV26E
Philips Semiconductors
|
Check for Price | No | Transferred | 1 A | 2.5 V | 75 ns | RECTIFIER DIODE | SINGLE | NO | 1 kV | 1 | 30 A | 1 | e0 | 175 °C | Tin/Lead (Sn80Pb20) | PHILIPS SEMICONDUCTORS | unknown | EAR99 | ||||||||||||||||||||||||||||
|
|
BYV26E(Z)
Galaxy Semi-Conductor Co Ltd
|
Check for Price | Yes | Active | 1 A | 2.5 V | 75 ns | RECTIFIER DIODE | SINGLE | NO | 1 kV | 1 | 30 A | 1 | 150 °C | 260 | GALAXY SEMI-CONDUCTOR CO LTD | unknown | EAR99 | |||||||||||||||||||||||||||||
|
|
BYV26EGP-E3/92
Vishay Semiconductors
|
Check for Price | Yes | Yes | Active | 1 A | 75 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 kV | 1 | FREE WHEELING DIODE | 1 | Not Qualified | O-PALF-W2 | e3 | DO-204AC | 175 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | VISHAY SEMICONDUCTORS | DO-15 | O-PALF-W2 | 2 | unknown | EAR99 | 8541.10.00.80 |