Parametric results for: BUZ36 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

570.0 mJ 1

8 hits Apply

DRAIN 1

8 hits Apply

Configuration (1)

SINGLE 7

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DS Breakdown Voltage-Min (1)

200 V 3

8 hits Apply

Drain Current-Max (ID) (3)

2.9 A 1 3.6 A 1 22 A 5

Min (A) - Max (A)

8 hits Apply

Drain-source On Resistance-Max (1)

120 mΩ 3

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

200 pF 1

8 hits Apply

TO-204AE 1 TO-3 2

8 hits Apply

O-MBFM-P2 3

8 hits Apply

e0 5

8 hits Apply

Manufacturer (6)

Infineon Technologies AG 3 New Jersey Semiconductor Products Inc 1 North American Philips Discrete Products Div 1 Siemens 1 TT Electronics Power and Hybrid / Semelab Limited 1 TT Electronics Resistors 1

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Number of Elements (1)

1 7

8 hits Apply

Number of Terminals (1)

2 3

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

150.0 °C 5

8 hits Apply

METAL 3

8 hits Apply

ROUND 3

8 hits Apply

FLANGE MOUNT 3

8 hits Apply

Active 1 Obsolete 6 Transferred 1

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

125 W 1

8 hits Apply

125 W 5

8 hits Apply

Surface Mount (1)

NO 7

8 hits Apply