Parametric results for: BUZ356 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1

4 hits Apply

720.0 mJ 1

4 hits Apply

Configuration (1)

SINGLE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

800 V 2

4 hits Apply

Drain Current-Max (ID) (1)

5 A 3

4 hits Apply

Drain-source On Resistance-Max (1)

2 Ω 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

140 pF 1

4 hits Apply

TO-218 2

4 hits Apply

R-PSFM-T3 2

4 hits Apply

e0 3

4 hits Apply

Manufacturer (4)

Infineon Technologies AG 1 North American Philips Discrete Products Div 1 Semiconductor Technology Inc 1 Siemens 1

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

3 2

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

150.0 °C 3

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

FLANGE MOUNT 2

4 hits Apply

Contact Manufacturer 1 Obsolete 1 Transferred 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

125 W 1

4 hits Apply

125 W 3

4 hits Apply

Surface Mount (1)

NO 3

4 hits Apply