Parametric results for: BUZ12A under Power Field-Effect Transistors

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Manufacturer Part Number: buz12a
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BUZ12A-E3046
Infineon Technologies AG
Check for Price Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 50 V 1 42 A 35 mΩ 41 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 168 A SWITCHING SILICON R-PSIP-T3 Not Qualified PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE INFINEON TECHNOLOGIES AG TO-220AB IN-LINE, R-PSIP-T3 3 unknown EAR99
BUZ12A-E3044
Siemens
Check for Price Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 42 A 35 mΩ 41 mJ 420 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 168 A SWITCHING SILICON 460 ns 180 ns R-PSSO-G3 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE SIEMENS A G TO-220AB SMALL OUTLINE, R-PSSO-G3 3 unknown EAR99 8541.29.00.95
BUZ12AL-E3045
Siemens
Check for Price Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 50 V 1 42 A 35 mΩ LOGIC LEVEL COMPATIBLE 41 mJ 450 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 168 A SWITCHING SILICON 550 ns 300 ns R-PSSO-G2 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE SIEMENS A G TO-220AB SMALL OUTLINE, R-PSSO-G2 3 unknown EAR99 8541.29.00.95
BUZ12AL
Siemens
Check for Price No Obsolete N-CHANNEL NO SINGLE 3 50 V 1 42 A 35 mΩ LOGIC LEVEL COMPATIBLE 41 mJ 450 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 125 W 168 A SWITCHING SILICON 550 ns 300 ns TO-220AB R-PSFM-T3 e0 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Tin/Lead (Sn/Pb) THROUGH-HOLE SINGLE SIEMENS A G FLANGE MOUNT, R-PSFM-T3 unknown EAR99 8541.29.00.95
BUZ12A-E3044
Infineon Technologies AG
Check for Price Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 42 A 35 mΩ 41 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 168 A SWITCHING SILICON R-PSSO-G3 Not Qualified PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE INFINEON TECHNOLOGIES AG TO-220AB SMALL OUTLINE, R-PSSO-G3 3 unknown EAR99
BUZ12AL-E3045
Infineon Technologies AG
Check for Price Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 50 V 1 42 A 35 mΩ LOGIC LEVEL COMPATIBLE 41 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 168 A SWITCHING SILICON R-PSSO-G2 Not Qualified PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE INFINEON TECHNOLOGIES AG TO-220AB SMALL OUTLINE, R-PSSO-G2 3 unknown EAR99
BUZ12A-E3046
Siemens
Check for Price Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 50 V 1 42 A 35 mΩ 41 mJ 420 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 168 A SWITCHING SILICON 460 ns 180 ns R-PSIP-T3 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE SIEMENS A G TO-220AB IN-LINE, R-PSIP-T3 3 unknown EAR99 8541.29.00.95
BUZ12AL-E3044
Siemens
Check for Price Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 42 A 35 mΩ LOGIC LEVEL COMPATIBLE 41 mJ 450 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 168 A SWITCHING SILICON 550 ns 300 ns R-PSSO-G3 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE SIEMENS A G TO-220AB SMALL OUTLINE, R-PSSO-G3 3 unknown EAR99 8541.29.00.95
BUZ12A
Infineon Technologies AG
Check for Price Obsolete N-CHANNEL NO SINGLE 1 33 A METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 75 W 150 °C INFINEON TECHNOLOGIES AG , unknown EAR99
BUZ12AL-E3046
Siemens
Check for Price Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 50 V 1 42 A 35 mΩ LOGIC LEVEL COMPATIBLE 41 mJ 450 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 168 A SWITCHING SILICON 550 ns 300 ns R-PSIP-T3 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE SIEMENS A G TO-220AB IN-LINE, R-PSIP-T3 3 unknown EAR99 8541.29.00.95